PowerDoc

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Fuji increases power density with SiC and new packaging technologies

<b>Sponsored by Fuji Electric</b><p><b>By: Y. Iwasaki, M. Chounabayashi, M. Nakazawa, S. Iwamoto, Y. Oonishi, M. Hori, H. Kakiki and O. Ikawa, Fuji Electric Co.,</b> …

Arduino

6.5 KV Silicon Carbide JFET Switch Module for High Energy Density Power Conversion Systems. [electronic resource] in SearchWorks catalog

Publication date2015NotePublished through SciTech Connect.09/01/2015."sand2015-7689c""603641"Proposed for presentation at the EESAT Peer Review 2015 …

Stanford University

STMicroelectronics launches 1200V SiC junction barrier Schottky diodes spanning 2-40A current ratings

<b>11 May 2017</b><p>STMicroelectronics of Geneva, Switzerland has lauched a full range of 2-40A 1200V silicon carbide (SiC) JBS (junction barrier Schottky) …

MilTech – PR Distribution

The “<b>Crosslinked Polyethylene (PE-X) Pipe Market</b> Report” gives a clear understanding of the present market condition which includes of historic and …

Eval board for 1.7kV SiC mosfet

It delivers two isolated 12Vdc outputs, and potential applications include creating auxiliary rails from DC links in single and three-phase mains …

New York Power Electronics Manufacturing Consortium produces its first SiC-based patterned wafers

<b>10 February 2017</b><p>The New York Power Electronics Manufacturing Consortium (NY-PEMC) at SUNY Polytechnic Institute's Albany NanoTech Complex has …

Review of Silicon Carbide Power Devices and Their Applications

ARPA-E to award up to $20 million for wide bandgap power electronics

The acronym-loving officials of ARPA-E have established a new program called Creating Innovative and Reliable Circuits Using Inventive Topologies and …

Clean Energy

Mouser signs global distribution agreement with United Silicon Carbide

<b>18 January 2017</b><p>Mouser Electronics Inc has announced a global distribution agreement with device maker United Silicon Carbide Inc (USCi) of Monmouth …

Wolfspeed introduces new SiC MOSFET for EV drivetrains

Wolfspeed, a Cree Company, has introduced a 900 V, 10 mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25° C. According …

Electric Vehicles

Fully vertical and quasi-vertical gallium nitride pn diodes on silicon

Massachusetts Institute of Technology (MIT) in the USA has developed quasi-vertical and fully vertical pn gallium nitride diodes on silicon, claiming …

Nanotech

SiC Schottky Barrier Diodes Tutorial - ROHM

Welcome to ROHM Semiconductor’s SiC Schottky Barrier Diodes product training module. The purpose of this training module is to provide a brief …

GaN-on-Silicon for scalable high electron mobility transistors

University of Illinois<p>This is a GaN on 200 mm Si wafer thickness mapping image.<p>University of Illinois<p>a) Cross sectional structure. b) TEM image of …

Low on-resistance silicon carbide MOSFET targets EV drives

The MOSFET is initially available in bare die form as part number CPM3-0900-0010A, and is currently available for purchase from SemiDice. Wolfspeed …

Multi-level metalization for high-density gallium nitride transistors on silicon

Researchers based in USA and Korea have used multi-level metalization to improve the performance and density of aluminium gallium nitride/gallium …

Engineering